Aluminum Nitride (AlN) ceramics offer thermal conductivity up to 180 W/(m·K) with excellent electrical insulation and a thermal expansion coefficient close to silicon — making them essential for 5G base station power amplifiers, IGBT modules, high-power LED lighting, and RF packaging.
1. Key Properties of AlN Ceramic
| Property | Typical Value | vs. Al₂O₃ |
|---|---|---|
| Thermal Conductivity | 170–200 W/(m·K) | Al₂O₃: 20–30 W/(m·K) |
| CTE (25–200°C) | 4.5×10⁻⁶/K | ~7×10⁻⁶/K (close to Si) |
| Dielectric Constant (1MHz) | 8.8 | 9.5 |
| Volume Resistivity | >10¹⁴ Ω·cm | >10¹⁴ Ω·cm |
| Flexural Strength | 300–400 MPa | 300–400 MPa |
2. Product Forms and Applications
- AlN Bare Substrates: 0.25–1.0mm thickness, Ra<0.5μm, for DBC/AMB copper bonding
- DBC Substrates (Direct Bonded Copper): Copper foil (0.1–0.3mm) bonded to both sides; used in IGBT modules and power packaging
- AMB Substrates (Active Metal Brazing): Copper bonded via active brazing alloy; preferred for EV power modules requiring higher reliability
- Thin-Film Circuit Substrates: Photolithography-patterned for RF/microwave circuits, μm-level line width precision
3. Major Suppliers (China, 2026)
- ChaoZhou SanHuan Group: Largest domestic AlN supplier, mature DBC/AMB processes, monthly capacity 100,000+ units
- Zhongke Kehua: High thermal conductivity AlN (170–190 W/(m·K)), IATF 16949 certified
- Zhejiang Huajin: Standard + custom DBC/AMB substrate processing
- Japan: NGK / Kyocera: Benchmark quality (thermal conductivity up to 220 W/(m·K)) but 3–5× the price of Chinese alternatives
4. Demand Drivers: 5G and EV
- 5G Base Station AAU: 5G antenna array power density is 3–5× that of 4G; GaN on SiC power amplifiers require AlN substrates. Each AAU uses 3–6 AlN DBC substrates
- EV Power Modules: 800V platform SiC MOSFET modules increasingly use AlN AMB substrates; 2026 average AlN usage per BEV: 0.5–1.2 m²
5. Procurement Checklist
- Thermal conductivity batch consistency: AlN conductivity varies 15–25 W/(m·K) by batch; request factory test reports
- Metallization process: Confirm DBC/AMB/thick-film requirements; copper thickness and via specs must match your packaging process
- Flatness/warpage: DBC/AMB substrates typically require flatness <0.3%; specify in PO
- Surface finish: Ni-plating (5–8μm) or Au-plating (0.5–2μm) may be needed for soldering and corrosion resistance
- Compliance: Confirm RoHS compliance and lead-free soldering compatibility
6. Price Reference (2026)
- AlN bare substrate (200×200×0.635mm): ~USD 30–60/piece
- AlN DBC substrate (single/double-sided): ~USD 60–150/piece
- AlN AMB substrate: ~USD 100–250/piece
With dual-band (Sub-6GHz + mmWave) 5G deployment and 800V BEV penetration accelerating in 2026, AlN DBC/AMB substrate demand is projected to grow 25–30% YoY.
Data current as of July 2026. Prices are market reference ranges; confirm specifications and MOQ with suppliers.
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